IRFP460LC Datasheet (PDF)
0.1. irfp460lc.pdf Size:154K _international_rectifier
PD — 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
0.2. irfp460lcpbf.pdf Size:205K _international_rectifier
PD — 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu
0.3. irfp460lc sihfp460lc.pdf Size:1124K _vishay
IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio
0.4. irfp460lc sihfp460lc.pdf Size:1133K _infineon
IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio
IRFP460N Datasheet (PDF)
0.1. irfp460n.pdf Size:94K _international_rectifier
PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
0.2. irfp460npbf.pdf Size:161K _international_rectifier
PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character
0.3. irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf Size:158K _vishay
IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura
Цоколёвка
IRFP460 выполнен в усиленном корпусе TO-247, который применяется там, где высокие уровни мощности не допускают использование универсального ТО-220, и немного превосходит более раннюю версию ТО-218. Для крепления его на радиатор имеется специальное изолированное отверстием в центре. Если смотреть на маркировку (рисунок ниже), то слева направо находятся выводы: затвора (З), стока (С) и истока (И).
Устройство не содержит свинца (Pb-free), о чём указанно в самом начале технического описания (datasheet). Допускается его монтаж на плату с помощью дешёвых оловянно-свинцовых припоев, никак не влияющих на последующую работу изделия в целом. Этим моментом пользуются производители, везущие свою продукцию в страны, где пока не требуется выполнение стандартов по соблюдению экологических норм.
IRFP460APBF Datasheet (PDF)
0.1. irfp460apbf.pdf Size:206K _international_rectifier
PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc
0.2. irfp460apbf.pdf Size:212K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
6.1. irfp460as.pdf Size:115K _international_rectifier
PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird
6.2. irfp460a.pdf Size:95K _international_rectifier
PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
6.3. irfp460a sihfp460a.pdf Size:180K _vishay
IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat
Datasheet Download — International Rectifier
| Номер произв | IRFP460A | ||
| Описание | Power MOSFET | ||
| Производители | International Rectifier | ||
| логотип | |||
|
1Page
PD- 91880 l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching HEXFETPower MOSFET VDSS 500V 0.27Ω ID 20A l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN1001) TO-247AC G D S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt Operating Junction and l Full Bridge l PFC Boost Notes through are on page 8 www.irf.com
IRFP460A Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS∆TJ Breakdown Voltage Temp. Coefficient ––– 0.61 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.27 Ω VGS = 10V, ID = 12A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 30V ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain («Miller») Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance Avalanche Characteristics 11 ––– ––– S VDS = 50V, ID = 12A ––– ––– 105 ID = 20A ––– ––– 26 nC VDS = 400V ––– ––– 42 VGS = 10V, See Fig. 6 and 13 ––– 18 ––– VDD = 250V ––– 55 ––– ns ID = 20A ––– 45 ––– RG = 4.3Ω ––– 39 ––– RD = 13Ω,See Fig. 10 ––– 3100 ––– VGS = 0V ––– 480 ––– VDS = 25V ––– 18 ––– pF ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– 130 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 400V Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance RθJC RθCS RθJA Junction-to-Case IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) ––– ––– 20 A showing the integral reverse VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse RecoveryCharge ton Forward Turn-On Time 2 ––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V ––– 480 710 ns TJ = 25°C, IF = 20A ––– 5.0 7.5 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com
IRFP460A TJ = 25 °C 1 10 VDS , Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics 100 TJ = 150 °C 1 VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 100 TJ = 150 ° C 10 TJ = 25 °C 1 V DS= 50V 20µs PULSE WIDTH VGS , Gate-to-Source Voltage (V) 9.0 Fig 3. Typical Transfer Characteristics www.irf.com 3.0 ID = 192A0A 2.5 VGS = 10V 0.0 TJ, Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature |
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| Всего страниц | 8 Pages | ||
| Скачать PDF |
IRFP460LCPBF Datasheet (PDF)
0.1. irfp460lcpbf.pdf Size:205K _international_rectifier
PD — 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu
5.1. irfp460lc.pdf Size:154K _international_rectifier
PD — 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
5.2. irfp460lc sihfp460lc.pdf Size:1124K _vishay
IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio
5.3. irfp460lc sihfp460lc.pdf Size:1133K _infineon
IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio
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IRFP460A Datasheet (PDF)
0.1. irfp460as.pdf Size:115K _international_rectifier
PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird
0.2. irfp460apbf.pdf Size:206K _international_rectifier
PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc
0.3. irfp460a.pdf Size:95K _international_rectifier
PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
0.4. irfp460a sihfp460a.pdf Size:180K _vishay
IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat
0.5. irfp460apbf.pdf Size:212K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
IRF460 Datasheet (PDF)
0.1. irf460.pdf Size:140K _international_rectifier
PD -90467REPETITIVE AVALANCHE AND dv/dt RATED IRF460500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF460 500V 0.27 21The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ach
0.2. irf460b irf460c.pdf Size:413K _nell
RoHS IRF460 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET20A, 500VoltsDESCRIPTIOND The Nell IRF460 is a three-terminal silicon devicewith current conduction capability of 20A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
0.3. irf460-f2f.pdf Size:271K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS
0.4. irf460.pdf Size:230K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive Requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamp
0.5. irf460-f2.pdf Size:256K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS
IRFP460APBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFP460APBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 280
W
Предельно допустимое напряжение сток-исток |Uds|: 500
V
Предельно допустимое напряжение затвор-исток |Ugs|: 30
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 20
A
Максимальная температура канала (Tj): 150
°C
Общий заряд затвора (Qg): 105
nC
Время нарастания (tr): 55
ns
Выходная емкость (Cd): 480
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.27
Ohm
Тип корпуса:
IRFP460APBF
Datasheet (PDF)
0.1. irfp460apbf.pdf Size:206K _international_rectifier
PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc
0.2. irfp460apbf.pdf Size:212K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
6.1. irfp460as.pdf Size:115K _international_rectifier
PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird
6.2. irfp460a.pdf Size:95K _international_rectifier
PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
6.3. irfp460a sihfp460a.pdf Size:180K _vishay
IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat
Другие MOSFET… IRFP450N
, IRFP450NPBF
, IRFP450PBF
, IRFP450R
, IRFP451R
, IRFP452R
, IRFP453R
, IRFP4568PBF
, APT50M38JLL
, IRFP460B
, IRFP460C
, IRFP460LCPBF
, IRFP460N
, IRFP460NPBF
, IRFP460P
, IRFP460PBF
, IRFP462
.
IRFP460PBF Datasheet (PDF)
0.1. irfp460pbf irfp460 sihfp460.pdf Size:156K _vishay
IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le
6.1. irfp460p.pdf Size:154K _international_rectifier
PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f
6.2. irfp460p.pdf Size:172K _infineon
PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f
IRFP460NPBF Datasheet (PDF)
0.1. irfp460npbf.pdf Size:161K _international_rectifier
PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character
0.2. irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf Size:158K _vishay
IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura
6.1. irfp460n.pdf Size:94K _international_rectifier
PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
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