Биполярный транзистор BC817-40L — описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC817-40L
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора:
BC817-40L
Datasheet (PDF)
0.1. sbc817-40lt3g.pdf Size:89K _onsemi
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
0.2. bc817-16lt3g bc817-40lt3g bc817-16lt3g bc817-40lt3g.pdf Size:89K _onsemi
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
0.3. sbc817-40lt1g.pdf Size:89K _onsemi
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
0.4. bc817-25lt1g bc817-40lt1g.pdf Size:125K _onsemi
BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector — Emitter Voltage VCEO 45 V3Collector — Base Voltage VCBO 50 VEmitter — Base Voltage VEBO 5.0 V12Collect
0.5. lbc817-40lt1g.pdf Size:280K _lrc
LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1GS-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site andS-LBC817-40LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MA
0.6. bc817-25lg bc817-40lg.pdf Size:570K _first_silicon
BC817 SERIES General Purpose TransistorsBC817-16/25/40LGBC817-16LG,BC817-25LG,BC817-40LGSERIESFeatures 3 Pb-Free Packages are Available12Maximum RatingsRating Symbol Value UnitSOT-23Collector-Emitter Voltage VCEO 45 VCollector-Base Voltage VCBO 50 VCOLLECTOREmitter-Base Voltage VEBO 5.0 V 3Collector Current — Continuous IC 500 mAdc1BASE2EMITTERDevi
Другие транзисторы… BC327-025
, BC337-025
, BC337-040
, BC807-16L
, BC807-25L
, BC807-40L
, BC817-16L
, BC817-25L
, 2SC5200
, BC846AL
, BC846BL
, BC846BM3T5G
, BC846BPDW1
, BC846C
, BC847AL
, BC847BDW1
, BC847BL
.
BC817W Datasheet (PDF)
0.1. bc817 bc817w bc337.pdf Size:236K _philips
BC817; BC817W; BC33745 V, 500 mA NPN general-purpose transistorsRev. 06 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors.Table 1. Product overviewType number Package PNP complementNXP JEITABC817 SOT23 — BC807BC817W SOT323 SC-70 BC807WBC337 SOT54 (TO-92) SC-43A BC327 Also available in SOT54A and SOT54 va
0.2. bc817w 3.pdf Size:55K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC817WNPN general purpose transistor1999 Apr 15Product specificationSupersedes data of 1997 Mar 05Philips Semiconductors Product specificationNPN general purpose transistor BC817WFEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector
0.3. bc817w.pdf Size:235K _secos
BC817 -16W, -25W, -40W 500 mA, 50 V NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES For general AF applications AL High collector current 33 High current gain Top View C B Low collector-emitter saturation voltage 11 22K EPACKAGE INFORMATI
0.4. bc817w.pdf Size:35K _kec
SEMICONDUCTOR BC817WTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MComplementary to BC807W.DIM MILLIMETERS_+A 2.00 0.20D2_B 1.25 + 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E 2.10 + 0.20MAXIMUM RATING (Ta=25 ) G 0.65H 0.15+0.1/-0.06CHARACTERISTIC SYMBOL RATING UNIT J 1.30K 0.00~0.10V
0.5. bc817w.pdf Size:1232K _kexin
SMD Type TransistorsNPN TransistorsBC817W (KC817W) Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage Complementary to BC807W1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector — Base Voltage VCBO 50 Collector — Emitter Volt
BC817DS Datasheet (PDF)
0.1. bc817ds.pdf Size:128K _philips
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle
0.2. bc817ds.pdf Size:215K _nxp
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle
8.1. bc817dpn.pdf Size:149K _philips
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DPNNPN/PNP general purpose transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN/PNP general purpose transistor BC817DPNFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO collector
BC817-40W Datasheet (PDF)
0.1. bc817-40wt1g.pdf Size:66K _onsemi
BC817-40W45 V, 0.5 A, GeneralPurpose NPN TransistorON Semiconductors BC817-40W is a General Purpose NPNTransistor that is housed in the SC-70/SOT-323 package.Featureswww.onsemi.com AEC-Q101 Qualified and Consult Factory for PPAP Capable This Device is Pb-Free, Halogen Free/BFR Free and is RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS (TA = 25C)Rating Symbo
0.2. bc817-40wt1.pdf Size:287K _willas
FM120-M WILLASTHRUBC817-40WT1General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize
0.3. lbc817-40wt1g.pdf Size:170K _lrc
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.LBC817-40WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40WT1G3MAXIMUM RATINGSRating Symbol Value Unit12CollectorEmit
BC817DPN Datasheet (PDF)
0.1. bc817dpn.pdf Size:149K _philips
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DPNNPN/PNP general purpose transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN/PNP general purpose transistor BC817DPNFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO collector
8.1. bc817ds.pdf Size:128K _philips
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle
8.2. bc817ds.pdf Size:215K _nxp
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302BC817DSNPN general purpose double transistorProduct data sheet 2002 Nov 22Supersedes data of 2002 Aug 09NXP Semiconductors Product data sheetNPN general purpose double transistor BC817DSFEATURES QUICK REFERENCE DATA High current (500 mA)SYMBOL PARAMETER MAX. UNIT 600 mW total power dissipationVCEO colle
BC817-40L Datasheet (PDF)
0.1. sbc817-40lt3g.pdf Size:89K _onsemi
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
0.2. bc817-16lt3g bc817-40lt3g bc817-16lt3g bc817-40lt3g.pdf Size:89K _onsemi
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
0.3. sbc817-40lt1g.pdf Size:89K _onsemi
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
0.4. bc817-25lt1g bc817-40lt1g.pdf Size:125K _onsemi
BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector — Emitter Voltage VCEO 45 V3Collector — Base Voltage VCBO 50 VEmitter — Base Voltage VEBO 5.0 V12Collect
0.5. lbc817-40lt1g.pdf Size:280K _lrc
LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1GS-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site andS-LBC817-40LT1GControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MA
0.6. bc817-25lg bc817-40lg.pdf Size:570K _first_silicon
BC817 SERIES General Purpose TransistorsBC817-16/25/40LGBC817-16LG,BC817-25LG,BC817-40LGSERIESFeatures 3 Pb-Free Packages are Available12Maximum RatingsRating Symbol Value UnitSOT-23Collector-Emitter Voltage VCEO 45 VCollector-Base Voltage VCBO 50 VCOLLECTOREmitter-Base Voltage VEBO 5.0 V 3Collector Current — Continuous IC 500 mAdc1BASE2EMITTERDevi
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