Содержание
Графические данные (эксплуатационные характеристики)
Рис.1. Зависимость тока коллектора (IC) от напряжения коллектор-эмиттер (VCE).
Рис.2. Зависимость коэффициента усиления (hFE) от тока коллектора (IC).
Рис.3. Зависимость напряжения насыщения коллектор-эмиттер (VCE(sat)) от тока коллектора (IC).
Рис.4. Зависимость напряжения насыщения база-эмиттер (VBE(sat)) от тока коллектора (IC).
Рис.5. Зависимость тока коллектора (IC) от напряжения база-эмиттер (VBE).
Рис.6. Зависимость емкости (C) от обратного напряжения (V).
Рис.7. Зависимость граничной частоты (fT) от тока коллектора (IC).
Рис.8. Зависимость мощности рассеяния (РС) от температуры воздуха (Та).
Биполярный транзистор L8550 — описание производителя. Основные параметры. Даташиты.
Наименование производителя: L8550
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 15
pf
Статический коэффициент передачи тока (hfe): 85
Корпус транзистора:
L8550
Datasheet (PDF)
0.1. l8550m.pdf Size:407K _blue-rocket-elect
L8550M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features L8050M Complementary pair with L8050M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2
0.2. l8550.pdf Size:603K _blue-rocket-elect
L8550(BR3CA8550K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features PC, IC , L8050(BR3DA8050K) High PC and IC, complementary pair with L8050(BR3DA8050K). / Applications 2W 2W output amplifier of portable radios in cl
0.3. l8550plt1g.pdf Size:234K _lrc
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.4. l8550hslt1g.pdf Size:83K _lrc
LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesS-L8550HPLT1GPNP SiliconFEATURESeries High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir
0.5. l8550hplt1g.pdf Size:89K _lrc
LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem
0.6. l8550hqlt1g.pdf Size:85K _lrc
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir
0.7. l8550qlt1g.pdf Size:202K _lrc
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
0.8. l8550hrlt1g.pdf Size:84K _lrc
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir
Другие транзисторы… KSA928T
, KSC2328T
, KTA1273T
, KTC2022I
, KTC3199M
, KTC3205T
, L8050
, L8050M
, 2N2222
, L8550M
, M28M
, MJE13009ZJ
, MMBR911
, MMBT5401T
, MMBT5551T
, MMBTA42T
, MMBTA44N
.
Электрические характеристики
Параметры действительны при температуре воздуха 25℃.
| Обозначение | Параметр | Условия измерения | Мин. | Макс. | Ед. изм. |
|---|---|---|---|---|---|
| V(BR)CBO | Пробивное напряжение коллектор-база | IC=100uA, IE=0 | 40 | V | |
| V(BR)CEO | Пробивное напряжение коллектор-эмиттер | IC=0.1mA, IB=0 | 25 | V | |
| V(BR)EBO | Пробивное напряжение эмиттер-база | IE=100μA, IC=0 | 5 | V | |
| ICBO | Ток отсечки коллектора | VCB=40V, IE=0 | 0,1 | μA | |
| ICEO | Ток отсечки эмиттера | VCE=20V, IE=0 | 0,1 | μA | |
| IEBO | Ток отсечки эмиттера | VEB=5V, IC=0 | 0,1 | μA | |
| hFE(1) | Коэффициент усиления по постоянному току | VCE=1V, IC=100mA | 85 | ||
| hFE(2) | VCE=1V, IC=800mA | 40 | |||
| VCE(sat) | Напряжение насыщения коллектор-эмиттер | IC=800mA, IB=80mA | 0,5 | V | |
| VBE(sat | Напряжение насыщения база-эмиттер | IC=800mA, IB=80mA | 1,2 | V | |
| VBE | Напряжение база-эмиттер | VCE=1V, IC=10mA | 1 | V | |
| fT | Граничная частота | VCE=10V, IC=50mA, f=30MHz | 100 | MHz |
Импортные и отечественные аналоги транзистора D209L
| Аналог | VCEO | IC | PC | hFE | fT |
|---|---|---|---|---|---|
| SS8050 | 25 | 1,5 | 1 | 85 | 100 |
| Отечественное производство | |||||
| КТ698В | 50 | 2 | 0,6 | 50 | 150 |
| КТ6117А | 160 | 0,6 | 0,625 | 80 | 100 |
| Импорт | |||||
| MPS8050 | 25 | 1,5 | 0,625 | 85 | 190 |
| MPS650 | 40 | 2 | 0,625 | 75 | 75 |
| MPS651 | 60 | 2 | 0,625 | 75 | 75 |
| 2SC4145 | 2 | 1,2 | 200 | ||
| 2SD1207 | 50 | 2 | 1 | 100 | 150 |
| 2SD1207R | 50 | 2 | 1 | 100 | 150 |
| 2SD1207S | 50 | 2 | 1 | 140 | 150 |
| 2SD1207T | 50 | 2 | 1 | 200 | 150 |
| 2SD1207U | 50 | 2 | 1 | 280 | 150 |
| 2SD1347 | 50 | 3 | 1 | 100 | 150 |
| 2SD1347R | 50 | 3 | 1 | 100 | 150 |
| 2SD1347S | 50 | 3 | 1 | 140 | 150 |
| 2SD1347T | 50 | 3 | 1 | 200 | 150 |
| 2SD1347U | 50 | 3 | 1 | 280 | 150 |
| 2STL1360 | 60 | 3 | 1,2 | 160 | 130 |
| 2STX1360 | 60 | 3 | 1 | 160 | 130 |
| CD1207 | 50 | 2 | 1 | 100 | 150 |
| KTC3205 | 30 | 2 | 1 | 100 | |
| KTD1347 | 50 | 3 | 1 | 100 | 150 |
| SK3849 | 50 | 1,5 | 1 | 120 | 200 |
| SM2283 | 25 | 8 | 1 | 100 | 100 |
| STC4250L | 50 | 2 | 2 | 120 | 240 |
| STSA1805 | 60 | 5 | 1,1 | 85 | 150 |
| STSA851 | 60 | 5 | 1,1 | 85 | 130 |
| STX112 | 100 | 2 | 1,2 | 1000 | |
| TSC5988CT | 60 | 5 | 1 | 120 | 130 |
Примечание: параметры аналогов в таблице взяты из даташип производителя.
Биполярный транзистор 8050SS — описание производителя. Основные параметры. Даташиты.
Наименование производителя: 8050SS
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 15
pf
Статический коэффициент передачи тока (hfe): 85
Корпус транзистора:
8050SS
Datasheet (PDF)
0.1. 8050ss-d 8050ss-c.pdf Size:340K _mcc
MCCMicro Commercial ComponentsTM8050SS-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913118050SS-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storag
0.2. 8050sst.pdf Size:331K _secos
8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitter Collector Base JCLASSIFICATION OF hFE (1) A DMillimeterProduct-Rank 8050SST-B 8050SST-C 8050SST-DREF.B Min. Max.A 4.40
0.3. 8050ss.pdf Size:265K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 8050SS TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-
Другие транзисторы… 5552-4
, 55GN01CA-TB-E
, 55GN01FA
, 55GN01FA-TL-H
, 55GN01MA
, 55GN01MA-TL-E
, 753DCSM
, 8050C
, BC546
, 8050SS-C
, 8050SS-D
, 8550C
, 8550SS
, 8550SS-C
, 8550SS-D
, 9012S
, 9013S
.
Биполярный транзистор SS8050-D — описание производителя. Основные параметры. Даташиты.
Наименование производителя: SS8050-D
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 190
MHz
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора:
SS8050-D
Datasheet (PDF)
7.1. mmss8050-h.pdf Size:174K _mcc
MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat
7.2. ss8050-c-d.pdf Size:179K _mcc
MCCMicro Commercial ComponentsTMSS8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SS8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storag
7.3. mmss8050-l.pdf Size:174K _mcc
MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat
Другие транзисторы… QSX7
, QSX8
, QSZ1
, QSZ2
, QSZ3
, QSZ4
, R13003F1
, SS8050-C
, C945
, SS8050G
, SS8550-C
, SS8550-D
, SS8550G
, SUM201MN
, SVT6062
, WTMA94
, WTP772
.
SS8050LT1 Datasheet (PDF)
0.1. ss8050lt1.pdf Size:165K _wietron
SS8050LT1NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.015003002.44170.12540100 5.0100u0.15350.15 u4.0WEITRON 27-Jul-20121/2http://www.weitron.com.twSS8050LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gai
0.2. ss8050lt1.pdf Size:961K _shenzhen
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst
0.3. gstss8050lt1.pdf Size:187K _globaltech_semi
GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin
C8050D Datasheet (PDF)
0.1. c8050b c8050c c8050d.pdf Size:120K _usha
TransistorsC8050www.DataSheet4U.comwww.DataSheet4U.com
9.1. tpc8050-h.pdf Size:207K _toshiba
TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)
9.2. utc8050s.pdf Size:23K _utc
UTC 8050S NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL NPNTRANSISTORDESCRIPTIONThe UTC8050S is a low voltage high current small signalNPN transistor, designed for Class B push-pull audioamplifier and general purpose applications. FEATURES*Collector current up to 800mA*Collector-Emitter voltage up to 20 VTO-92*Complementary to UTC 8550S 1:EMITTER
9.3. ktc8050a.pdf Size:48K _kec
SEMICONDUCTOR KTC8050ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8550A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.0
9.4. ktc8050.pdf Size:38K _kec
SEMICONDUCTOR KTC8050TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8550.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.00 + 0.
9.5. ktc8050s.pdf Size:393K _kec
SEMICONDUCTOR KTC8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltag
9.6. stc8050n.pdf Size:242K _blue-rocket-elect
STC8050NSemiconductor Semiconductor NPN Silicon TransistorDescriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. Marking Package Code STC8050N STC8050 TO-92N Outline Dimensions unit : mm 4.20~4.402.25 Max.0.52 Max.0.90 Max.1.27 Typ.0.40 Max.1 2 33.55
9.7. hc8050s.pdf Size:130K _shantou-huashan
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8050S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation
9.8. hc8050.pdf Size:137K _shantou-huashan
Shantou Huashan Electronic Devices Co.,Ltd. HC8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation
9.9. ftc8050h.pdf Size:352K _first_silicon
SEMICONDUCTOR FTC8050HTECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement: FTA8550HPb-Free Package is available. SOT23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E
9.10. ftc8050.pdf Size:222K _first_silicon
SEMICONDUCTORFTC8050TECHNICAL DATA TRANSISTOR (NPN) FTC8050B C FEATURES Complimentary to FTA8550 Collector current: IC=0.5ADIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGMAXIMUM RATINGS (Ta=25 unless otherwise noted) C 3.70 MAXDD 0.55 MAXSymbol Parameter Value Unit E 1.00F 1.27G 0.85VCBO Collector-Base Voltage 40 V H 0.45_HJ 14.00 0.50+VCEO Col
9.11. dc8050.pdf Size:62K _dc_components
DC COMPONENTS CO., LTD.DC8050DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in 2W output amplifier of portableradios in class B push-pull operation.TO-92Pinning.190(4.83)1 = Emitter.170(4.33)2 = Base2oTyp3 = Collector.190(4.83).170(4.33)2oTypAbsolute Maximum Ratings(TA=25oC).500Characterist
HE8050S Datasheet (PDF)
0.1. he8050s.pdf Size:54K _hsmc
Spec. No. : HE6110HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.07.26MICROELECTRONICS CORP.Page No. : 1/5HE8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8050S is designed for general purpose amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ………………………………………………………….
8.1. he8050l.pdf Size:19K _utc
UTC HE8050 NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL NPN TRANSISTORDESCRIPTION The UTC HE8050 is a low voltage high current smallsignal NPN transistor, designed for Class B push-pull 2Waudio amplifier for portable radio and general purposeapplications.1FEATURES*Collector current up to 1.5A*Collector-Emitter voltage up to 25 V*Complimentary to U
8.2. he8050.pdf Size:216K _utc
UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES *Collector current up to 1.5A *Collector-Emitter volta
8.3. he8050.pdf Size:46K _hsmc
Spec. No. : HE6112HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.11.29MICROELECTRONICS CORP.Page No. : 1/4HE8050NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8050 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.TO-92Features High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)
C8050C Datasheet (PDF)
0.1. c8050b c8050c c8050d.pdf Size:120K _usha
TransistorsC8050www.DataSheet4U.comwww.DataSheet4U.com
9.1. tpc8050-h.pdf Size:207K _toshiba
TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)
9.2. utc8050s.pdf Size:23K _utc
UTC 8050S NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL NPNTRANSISTORDESCRIPTIONThe UTC8050S is a low voltage high current small signalNPN transistor, designed for Class B push-pull audioamplifier and general purpose applications. FEATURES*Collector current up to 800mA*Collector-Emitter voltage up to 20 VTO-92*Complementary to UTC 8550S 1:EMITTER
9.3. ktc8050a.pdf Size:48K _kec
SEMICONDUCTOR KTC8050ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8550A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.0
9.4. ktc8050.pdf Size:38K _kec
SEMICONDUCTOR KTC8050TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8550.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.00 + 0.
9.5. ktc8050s.pdf Size:393K _kec
SEMICONDUCTOR KTC8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltag
9.6. stc8050n.pdf Size:242K _blue-rocket-elect
STC8050NSemiconductor Semiconductor NPN Silicon TransistorDescriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. Marking Package Code STC8050N STC8050 TO-92N Outline Dimensions unit : mm 4.20~4.402.25 Max.0.52 Max.0.90 Max.1.27 Typ.0.40 Max.1 2 33.55
9.7. hc8050s.pdf Size:130K _shantou-huashan
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8050S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation
9.8. hc8050.pdf Size:137K _shantou-huashan
Shantou Huashan Electronic Devices Co.,Ltd. HC8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation
9.9. ftc8050h.pdf Size:352K _first_silicon
SEMICONDUCTOR FTC8050HTECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement: FTA8550HPb-Free Package is available. SOT23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E
9.10. ftc8050.pdf Size:222K _first_silicon
SEMICONDUCTORFTC8050TECHNICAL DATA TRANSISTOR (NPN) FTC8050B C FEATURES Complimentary to FTA8550 Collector current: IC=0.5ADIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGMAXIMUM RATINGS (Ta=25 unless otherwise noted) C 3.70 MAXDD 0.55 MAXSymbol Parameter Value Unit E 1.00F 1.27G 0.85VCBO Collector-Base Voltage 40 V H 0.45_HJ 14.00 0.50+VCEO Col
9.11. dc8050.pdf Size:62K _dc_components
DC COMPONENTS CO., LTD.DC8050DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in 2W output amplifier of portableradios in class B push-pull operation.TO-92Pinning.190(4.83)1 = Emitter.170(4.33)2 = Base2oTyp3 = Collector.190(4.83).170(4.33)2oTypAbsolute Maximum Ratings(TA=25oC).500Characterist
Аналоги
Для замены подойдут транзисторы кремниевые, со структурой NPN, эпитаксиально-планарные. Предназначены для применения в высокочастотных устройствах и узлах радиоэлектронной аппаратуры общего применения.
Производство российское и белорусское
| Модель | PC Ta = 25°C | UCB | UCE | UBE | IC | TJ | fT | Cob | hFE | Корпус |
|---|---|---|---|---|---|---|---|---|---|---|
| S8050A | 0,625 | 40 | 25 | 6 | 0,8 | 150 | 100 | 9 | 85 | TO-92 |
| КТ6111 А/Б/В/Г | 1 | 40 | 25 | 6 | 0,1 | 150 | 100 | 1,7 | 45…630 | TO-92 |
| КТ6114 А/Б/В | 0,45 | 50 | 45 | 5 | 0,1 | 150 | 150 | 3,5 | 60…1000 | TO-92 |
| КТ968 В | 4 | 300 | 200 | 5 | 0,1 | 150 | 90 | 2,8 | 35…220 | TO-39 |
Зарубежное производство
| Модель | PC | UCB | UCE | UBE | IC | TJ | fT | Cob | hFE | Корпус |
|---|---|---|---|---|---|---|---|---|---|---|
| S8050A | 0,625 | 40 | 25 | 6 | 0,8 | 150 | 100 | 9 | 85 | TO-92 |
| 3DG8050A | 0,625 | 40 | 25 | 6 | 0,8 | 150 | 100 | 9 | 85 | TO-92 |
| BC517S | 0,625 | 40 | 30 | 10 | 1 | 150 | 200 | — | 33000 | TO-92 |
| BTN8050A3 | 0,625 | 40 | 25 | 6 | 1,5 | 150 | 100 | 6 | 160 | TO-92 |
| BTN8050BA3 | 0,625 | 40 | 25 | 6 | 1,5 | 150 | 100 | — | 160 | TO-92 |
| CX908B/C/D | 0,625 | 40 | 25 | 6 | 1 | 150 | 100 | — | 120…260 | TO-92 |
| KTC3203 | 0,625 | — | 30 | — | 0,8 | 150 | 190 | — | 100 | TO-92 |
| KTC3211 | 0,625 | 40 | 25 | 6 | 1,5 | 150 | 190 | 9 | 85 | TO-92 |
| KTS8050 | 0,625 | — | 25 | — | 0,8 | 175 | — | — | 100 | TO-92 |
| M8050-C/D | 0,625 | 40 | 25 | 6 | — | 150 | 150 | — | 120…160 | TO-92 |
| S8050 | 0,3 | 409 | 25 | 5 | 0,5 | 150 | 150 | — | 120 | SOT-23 |
| 8050HQLT1 | 0,3 | 40 | 25 | 5 | 1,5 | 150 | — | — | 150 | SOT-23 |
| 8050QLT1 | 0,3 | 40 | 25 | 5 | 0,8 | 150 | — | — | 150 | SOT-23 |
| 8050SLT1 | 0,3 | 40 | 25 | 5 | 0,5 | 150 | 150 | — | 120 | SOT-23 |
| CHT9013GP | 0,3 | 45 | 25 | 5 | 0,5 | 150 | 150 | — | 120 | SOT-23 |
| F8050HPLG | 0,3 | 40 | 25 | 5 | 0,5 | 150 | 150 | — | 120 | SOT-23 |
| KTC9013SC | 0,35 | 40 | 30 | 5 | 0,5 | 150 | 150 | — | 200 | SOT-23 |
| MMBT8050D | 0,3 | 40 | 25 | 5 | 0,5 | 150 | 150 | — | 200 | SOT-23 |
| MMS9013-H/L | 0,3 | 40 | 25 | 5 | 0,5 | 150 | 150 | — | 200 | SOT-23 |
| NSS40201L | 0,54 | 40 | 25 | — | 4 | 150 | 150 | — | 120 | SOT-23 |
| NSS40201LT1G | 0,54 | 40 | 40 | 6 | 2 | — | 150 | — | 200 | SOT-23 |
| NSV40201LT1G | 0,54 | 40 | 40 | 6 | 2 | 150 | 150 | — | 200 | SOT-23 |
| PBSS4140T | 0,3 | 40 | 40 | 5 | 1 | 150 | 150 | — | 300 | SOT-23 |
| S9013 | 0,3 | 40 | 25 | 5 | 0,8 | 150 | 150 | — | 120 | SOT-23 |
| ZXTN2040F | 0,35 | — | 40 | — | 1 | — | 150 | — | 300 | SOT-23 |
| ZXTN25040DFL | 0,35 | — | 40 | — | 1,5 | — | 190 | — | 300 | SOT-23 |
| ZXTN649F | 0,5 | — | 25 | — | 3 | — | — | — | 200 | SOT-23 |
Примечание: все данные в таблицах взяты из даташит компаний-производителей.
SS8050-D Datasheet (PDF)
7.1. mmss8050-h.pdf Size:174K _mcc
MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat
7.2. ss8050-c-d.pdf Size:179K _mcc
MCCMicro Commercial ComponentsTMSS8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SS8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storag
7.3. mmss8050-l.pdf Size:174K _mcc
MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat
