Содержание
IRFZ46NPBF Datasheet (PDF)
0.1. irfz46npbf.pdf Size:215K _international_rectifier
PD — 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
0.2. irfz46npbf.pdf Size:215K _infineon
PD — 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
7.1. irfz46ns.pdf Size:149K _international_rectifier
PD — 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie
7.2. irfz46n.pdf Size:85K _international_rectifier
PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
7.3. auirfz46ns.pdf Size:245K _international_rectifier
PD — 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
7.4. irfz46nlpbf.pdf Size:679K _international_rectifier
PD — 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t
7.5. irfz46ns.pdf Size:258K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
7.6. irfz46n.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
IRFZ46NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ46NPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 107
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 53
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 72
nC
Время нарастания (tr): 76
ns
Выходная емкость (Cd): 407
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0165
Ohm
Тип корпуса:
IRFZ46NPBF
Datasheet (PDF)
0.1. irfz46npbf.pdf Size:215K _international_rectifier
PD — 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
0.2. irfz46npbf.pdf Size:215K _infineon
PD — 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
7.1. irfz46ns.pdf Size:149K _international_rectifier
PD — 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie
7.2. irfz46n.pdf Size:85K _international_rectifier
PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
7.3. auirfz46ns.pdf Size:245K _international_rectifier
PD — 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
7.4. irfz46nlpbf.pdf Size:679K _international_rectifier
PD — 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t
7.5. irfz46ns.pdf Size:258K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
7.6. irfz46n.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.
Электрические характеристики
Данные в таблицах действительны при температуре корпуса 25°C.
Предельные значения
| Обозначение | Параметр | Условия измерений | Мин. | Тип. | Макс. | Ед. изм |
|---|---|---|---|---|---|---|
| BVDSS | Напряжение пробоя сток-исток | VGS = 0 V, ID = 250 µA | 600 | — | — | V |
| ∆BVDSS/∆TJ | Коэффициент напряжение пробоя/температура | ID = 250 µA при 25°C | — | 0,65 | — | V/°C |
| IDSS | Ток стока при нулевом напряжении затвора | VDS = 600 V, VGS = 0 V | — | — | 10 | µA |
| VDS = 480 V, TC = 125°C | — | — | 100 | µA | ||
| IGSSF | Прямой ток утечки затвор-корпус | VGS = 30 V, VDS = 0 V | — | — | 100 | nA |
| IGSSR | Обратный ток утечки затвор-корпус | VGS = -30 V, VDS = 0 V | — | — | -100 | nA |
Рабочие параметры
| Обозначение | Параметр | Условия измерений | Мин. | Тип. | Макс. | Ед. изм. |
|---|---|---|---|---|---|---|
| VGS(th) | Пороговое напряжение открытия транзистора | VDS = VGS, ID = 250 µA | 2 | — | 4 | V |
| RDS(on) | Сопротивление сток-исток в открытом состоянии | VGS = 10 V, ID = 1.0 A | — | 3.8 | 5 | Ω |
| gFS | Крутизна передаточной характеристики | VDS = 40 V, ID = 1.0 A | — | 2.05 | — | S |
Динамические параметры
| Обозна-чение | Параметр | Условия измерений | Мин. | Тип. | Макс. | Ед. изм. |
|---|---|---|---|---|---|---|
| Ciss | Входная емкость | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | — | 380 | 490 | pF |
| Coss | Выходная емкость | — | 35 | 46 | pF | |
| Crss | Проходная емкость | — | 7.6 | 9.9 | pF |
IRFZ46Z MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ46Z
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 82
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 51
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 31
nC
Сопротивление сток-исток открытого транзистора (Rds): 0.0136
Ohm
Тип корпуса:
IRFZ46Z
Datasheet (PDF)
0.1. irfz46zlpbf irfz46zpbf irfz46zspbf.pdf Size:375K _international_rectifier
PD — 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
0.2. irfz46zpbf irfz46zspbf irfz46zlpbf.pdf Size:375K _infineon
PD — 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
0.3. irfz46zs.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRFZ46ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
0.4. irfz46z.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46ZIIRFZ46ZFEATURESStatic drain-source on-resistance:RDS(on) 13.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Другие MOSFET… IRFZ44V
, IRFZ44VL
, IRFZ44VS
, IRFZ44VZ
, IRFZ44VZS
, IRFZ44Z
, IRFZ44ZL
, IRFZ44ZS
, SPA11N60C3
, IRFZ46ZL
, IRFZ46ZS
, IRFZ48V
, IRFZ48VS
, IRFZ48Z
, IRFZ48ZL
, IRFZ48ZS
, IRL1404
.
IRFZ44EPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ44EPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 110
W
Предельно допустимое напряжение сток-исток |Uds|: 60
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 48
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 60
nC
Время нарастания (tr): 60
ns
Выходная емкость (Cd): 420
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.023
Ohm
Тип корпуса:
IRFZ44EPBF
Datasheet (PDF)
0.1. irfz44epbf.pdf Size:150K _international_rectifier
PD — 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area.
7.1. irfz44e.pdf Size:96K _international_rectifier
PD — 91671BIRFZ44EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.023G Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefi
7.2. irfz44espbf.pdf Size:234K _international_rectifier
PD — 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec
7.3. irfz44es.pdf Size:163K _international_rectifier
PD — 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve
7.4. irfz44espbf irfz44elpbf.pdf Size:234K _infineon
PD — 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec
7.5. irfz44e.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
7.6. irfz44es.pdf Size:205K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
Другие MOSFET… IRFZ34EPBF
, IRFZ34L
, IRFZ34NLPBF
, IRFZ34NPBF
, IRFZ34NSPBF
, IRFZ34PBF
, IRFZ34S
, IRFZ40PBF
, BUZ90A
, IRFZ44ESPBF
, IRFZ44L
, IRFZ44NLPBF
, IRFZ44NPBF
, IRFZ44NSPBF
, IRFZ44PBF
, IRFZ44R
, IRFZ44RPBF
.
IRFZ46ZS Datasheet (PDF)
0.1. irfz46zlpbf irfz46zpbf irfz46zspbf.pdf Size:375K _international_rectifier
PD — 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
0.2. irfz46zpbf irfz46zspbf irfz46zlpbf.pdf Size:375K _infineon
PD — 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
0.3. irfz46zs.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRFZ46ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
IRFZ46NS Datasheet (PDF)
0.1. irfz46ns.pdf Size:149K _international_rectifier
PD — 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie
0.2. auirfz46ns.pdf Size:245K _international_rectifier
PD — 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
0.3. irfz46ns.pdf Size:258K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
IRFZ46NS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ46NS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 120
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 53
A
Максимальная температура канала (Tj): 150
°C
Общий заряд затвора (Qg): 48
nC
Сопротивление сток-исток открытого транзистора (Rds): 0.02
Ohm
Тип корпуса:
IRFZ46NS
Datasheet (PDF)
0.1. irfz46ns.pdf Size:149K _international_rectifier
PD — 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie
0.2. auirfz46ns.pdf Size:245K _international_rectifier
PD — 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
0.3. irfz46ns.pdf Size:258K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Другие MOSFET… IRFZ44EL
, IRFZ44ES
, IRFZ44N
, IRFZ44NL
, IRFZ44NS
, IRFZ45
, IRFZ46N
, IRFZ46NL
, IRF840
, IRFZ48N
, IRFZ48NL
, IRFZ48NS
, IRL1004
, IRL1004L
, IRL1004S
, IRL2203N
, IRL2203NL
.
IRFZ46N Datasheet (PDF)
0.1. irfz46ns.pdf Size:149K _international_rectifier
PD — 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie
0.2. irfz46n.pdf Size:85K _international_rectifier
PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
0.3. auirfz46ns.pdf Size:245K _international_rectifier
PD — 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi
0.4. irfz46npbf.pdf Size:215K _international_rectifier
PD — 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
0.5. irfz46nlpbf.pdf Size:679K _international_rectifier
PD — 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t
0.6. irfz46npbf.pdf Size:215K _infineon
PD — 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
0.7. irfz46ns.pdf Size:258K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
0.8. irfz46n.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Назначение контактов
Перед применением полевка обычно уточняют его структуру, графическое обозначение и назначение контактов. Основой такого транзистора является появляющийся в полупроводнике, с двумя выводами (сток и исток), канал с электронной проводимостью (n-типа). Ширина этого канала зависит от величины подаваемого на затвор (третий вывод) отпирающего напряжения.
Графическое обозначение
Рассмотрим графическое обозначение. Канал типа-n рисуется пунктирной чертой, между примыкающими к нему линиями истока и стока. Стрелка, направленная на пунктирную черту, указывает на электронную проводимость прибора. Выводы канала обозначаются буквами: С-сток (D-drain), И-исток (S-source). Затвор, регулирующий сопротивление канала, обозначается буквой З (G-gate). В обозначении есть так называемый “паразитный” диод, он подключен к истоку анодом. Все графическое обозначение помещено в круг, символизирующий корпус прибора.
Распиновка
Наиболее широкое распространение rfz44n получил в пластиковом корпусе ТО220 с крепежным отверстием под винт, разработанном специально для дискретных мощных полевых транзисторов компанией International Rectifier. Цоколевка irfz44n, если смотреть на лицевую сторону, следующая: слева затвор (G), справа исток (S). Средний вывод является стоком (D), электрически соединенным с встроенным в корпус радиатором. Под маркой International Rectifier существуют экземпляры в корпусах D2PAK и ТО-262 (irfz44ns, irfz44nl), назначение выводов аналогично ТО-220.
