IRF9Z34N Datasheet (PDF)
0.1. irf9z34n.pdf Size:108K _international_rectifier
PD — 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
0.2. irf9z34npbf.pdf Size:240K _international_rectifier
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
0.3. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
0.4. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.5. irf9z34npbf.pdf Size:240K _infineon
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
0.6. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.7. irf9z34n.pdf Size:242K _inchange_semiconductor
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
IRF9Z34NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9Z34NPBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 68
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 19
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 35
nC
Время нарастания (tr): 55
ns
Выходная емкость (Cd): 280
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm
Тип корпуса:
IRF9Z34NPBF
Datasheet (PDF)
0.1. irf9z34npbf.pdf Size:240K _international_rectifier
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
0.2. irf9z34npbf.pdf Size:240K _infineon
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
6.1. irf9z34n.pdf Size:108K _international_rectifier
PD — 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
6.2. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
6.3. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
6.4. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
6.5. irf9z34n.pdf Size:242K _inchange_semiconductor
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
Другие MOSFET… IRF9Z24NLPBF
, IRF9Z24NPBF
, IRF9Z24NSPBF
, IRF9Z24PBF
, IRF9Z24SPBF
, IRF9Z30PBF
, IRF9Z34L
, IRF9Z34NLPBF
, J113
, IRF9Z34NSPBF
, IRF9Z34PBF
, IRF9Z34SPBF
, IRFAC30
, IRFAC40
, IRFAC42
, IRFAE30
, IRFAE40
.
IRF9Z34NPBF Datasheet (PDF)
0.1. irf9z34npbf.pdf Size:240K _international_rectifier
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
0.2. irf9z34npbf.pdf Size:240K _infineon
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
6.1. irf9z34n.pdf Size:108K _international_rectifier
PD — 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
6.2. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
6.3. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
6.4. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
6.5. irf9z34n.pdf Size:242K _inchange_semiconductor
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
IRF9Z34NS Datasheet (PDF)
0.1. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
0.2. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.3. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
IRF9Z34NSPBF Datasheet (PDF)
0.1. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.2. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
5.1. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
IRFI9Z34N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFI9Z34N
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 37
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 14
A
Максимальная температура канала (Tj): 150
°C
Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm
Тип корпуса:
IRFI9Z34N
Datasheet (PDF)
0.1. irfi9z34n.pdf Size:120K _international_rectifier
PD — 9.1530AIRFI9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -14ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-r
6.1. irfi9z34g.pdf Size:911K _international_rectifier
PD — 94866IRFI9Z34GPbF Lead-Free12/04/03Document Number: 91172 www.vishay.com1IRFI9Z34GPbFDocument Number: 91172 www.vishay.com2IRFI9Z34GPbFDocument Number: 91172 www.vishay.com3IRFI9Z34GPbFDocument Number: 91172 www.vishay.com4IRFI9Z34GPbFDocument Number: 91172 www.vishay.com5IRFI9Z34GPbFDocument Number: 91172 www.vishay.com6IRFI9Z34GPbFTO-2
6.2. irfi9z34g-pbf sihfi9z34g.pdf Size:1417K _vishay
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) — 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = — 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
6.3. irfi9z34g sihfi9z34g.pdf Size:1415K _vishay
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) — 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = — 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
Другие MOSFET… IRFI9520N
, IRFI9530G
, IRFI9540N
, IRFI9620G
, IRFI9630G
, IRFI9634G
, IRFI9640G
, IRFI9Z24N
, IRF3205
, IRFIB5N65A
, IRFIB6N60A
, IRFIB7N50A
, IRFIBC20G
, IRFIBC30G
, IRFIBC40G
, IRFIBC40GLC
, IRFIBE20G
.
IRF9Z34NS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9Z34NS
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 68
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 10
V
Максимально допустимый постоянный ток стока |Id|: 19
A
Максимальная температура канала (Tj): 150
°C
Общий заряд затвора (Qg): 23.3
nC
Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm
Тип корпуса:
IRF9Z34NS
Datasheet (PDF)
0.1. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
0.2. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.3. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
Другие MOSFET… IRF9Z24NS
, IRF9Z24S
, IRF9Z25
, IRF9Z30
, IRF9Z32
, IRF9Z34
, IRF9Z34N
, IRF9Z34NL
, IRFZ24N
, IRF9Z34S
, IRF9Z35
, IRFB11N50A
, IRFB9N30A
, IRFB9N60A
, IRFB9N65A
, IRFBA1404
, IRFBA22N50A
.
IRF9Z34NSPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9Z34NSPBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 68
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 19
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 35
nC
Время нарастания (tr): 55
ns
Выходная емкость (Cd): 280
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm
Тип корпуса:
IRF9Z34NSPBF
Datasheet (PDF)
0.1. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.2. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
5.1. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
Другие MOSFET… IRF9Z24NPBF
, IRF9Z24NSPBF
, IRF9Z24PBF
, IRF9Z24SPBF
, IRF9Z30PBF
, IRF9Z34L
, IRF9Z34NLPBF
, IRF9Z34NPBF
, SPA11N60C3
, IRF9Z34PBF
, IRF9Z34SPBF
, IRFAC30
, IRFAC40
, IRFAC42
, IRFAE30
, IRFAE40
, IRFAE50
.
IRFI9Z34N Datasheet (PDF)
0.1. irfi9z34n.pdf Size:120K _international_rectifier
PD — 9.1530AIRFI9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -14ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-r
6.1. irfi9z34g.pdf Size:911K _international_rectifier
PD — 94866IRFI9Z34GPbF Lead-Free12/04/03Document Number: 91172 www.vishay.com1IRFI9Z34GPbFDocument Number: 91172 www.vishay.com2IRFI9Z34GPbFDocument Number: 91172 www.vishay.com3IRFI9Z34GPbFDocument Number: 91172 www.vishay.com4IRFI9Z34GPbFDocument Number: 91172 www.vishay.com5IRFI9Z34GPbFDocument Number: 91172 www.vishay.com6IRFI9Z34GPbFTO-2
6.2. irfi9z34g-pbf sihfi9z34g.pdf Size:1417K _vishay
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) — 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = — 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
6.3. irfi9z34g sihfi9z34g.pdf Size:1415K _vishay
IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) — 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = — 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/
IRF9Z34NLPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9Z34NLPBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 68
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 19
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 35
nC
Время нарастания (tr): 55
ns
Выходная емкость (Cd): 280
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm
Тип корпуса:
IRF9Z34NLPBF
Datasheet (PDF)
0.1. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.2. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
6.1. irf9z34n.pdf Size:108K _international_rectifier
PD — 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
6.2. irf9z34npbf.pdf Size:240K _international_rectifier
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
6.3. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
6.4. irf9z34npbf.pdf Size:240K _infineon
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
6.5. irf9z34n.pdf Size:242K _inchange_semiconductor
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
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IRF9Z34NLPBF Datasheet (PDF)
0.1. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _international_rectifier
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.2. irf9z34nspbf irf9z34nlpbf.pdf Size:1102K _infineon
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
6.1. irf9z34n.pdf Size:108K _international_rectifier
PD — 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
6.2. irf9z34npbf.pdf Size:240K _international_rectifier
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
6.3. irf9z34ns.pdf Size:162K _international_rectifier
PD — 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
6.4. irf9z34npbf.pdf Size:240K _infineon
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
6.5. irf9z34n.pdf Size:242K _inchange_semiconductor
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
