Datasheet Download — International Rectifier
| Номер произв | IRF9540NSPBF | ||
| Описание | HEXFET POWER MOSFET | ||
| Производители | International Rectifier | ||
| логотип | |||
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1Page
www.DataSheet4U.com l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Some Parameters are Different from IRF9540NS/L l P-Channel l Lead-Free Description HEXFETPower MOSFET D VDSS = -100V G RDS(on) = 117mΩ S ID = -23A DD D2Pak IRF9540NSPbF ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Parameter Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V cPulsed Drain Current Maximum Power Dissipation VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy ePeak Diode Recovery dv/dt Operating Junction and RθJC RθJA www.irf.com gJunction-to-Ambient (PCB Mount, steady state) D
www.DataSheet4U.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Breakdown Voltage V VGS = 0V, ID = -250µA fV/°C Reference to 25°C, ID = -1mA mΩ VGS = -10V, ID = -14A V VDS = VGS, ID = -250µA S VDS = -50V, ID = -14A µA VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125°C nA VGS = -20V VGS = 20V nC ID = -14A fVDS = -80V VGS = -10V ns VDD = -50V ID = -14A fRG = 5.1Ω VGS = -10V nH Between lead, LS Internal Source Inductance ––– 7.5 ––– Ciss Input Capacitance ––– Coss Output Capacitance ––– Crss Reverse Transfer Capacitance pF VGS = 0V VDS = -25V ƒ = 1.0MHz, See Fig. 5 IS Continuous Source Current ISM Pulsed Source Current Ã(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ––– ––– -92 fV TJ = 25°C, IS = -14A, VGS = 0V ––– 140 210 ns TJ = 25°C, IF = -14A, VDD = -25V f––– 890 1340 nC di/dt = -100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) Starting TJ = 25°C, L = 0.88mH RG = 25Ω, IAS = -14A. (See Figure 12) ISD ≤ -14A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 2 Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1″ square PCB (FR-4or G-10 Material). For recommended footprint and soldering
www.DataSheet4U.com ≤60µs PULSE WIDTH Tj = 25°C Fig 1. Typical Output Characteristics -4.5V ≤60µs PULSE WIDTH Tj = 150°C Fig 2. Typical Output Characteristics 100 2.0 TJ = 25°C 10 1.5 1 ≤60µs PULSE WIDTH 4 6 8 10 12 Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance vs. Temperature |
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| Всего страниц | 11 Pages | ||
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IRF9540NSPBF Datasheet (PDF)
0.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
0.2. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
5.1. irf9540ns.pdf Size:286K _international_rectifier
PD — 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t
IRF9540SPBF Datasheet (PDF)
0.1. irf9540s irf9540spbf sihf9540s.pdf Size:197K _vishay
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) — 100 Surface Mount RDS(on) ()VGS = — 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
6.1. irf9540s.pdf Size:321K _international_rectifier
PD — 95699IRF9540SPbF Lead-Free9/10/04Document Number: 91079 www.vishay.com1IRF9540SPbFDocument Number: 91079 www.vishay.com2IRF9540SPbFDocument Number: 91079 www.vishay.com3IRF9540SPbFDocument Number: 91079 www.vishay.com4IRF9540SPbFDocument Number: 91079 www.vishay.com5IRF9540SPbFDocument Number: 91079 www.vishay.com6IRF9540SPbFPeak Diode R
6.2. irf9540s sihf9540s.pdf Size:172K _vishay
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) — 100 Surface Mount RDS(on) ()VGS = — 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
IRF9540S Datasheet (PDF)
0.1. irf9540s.pdf Size:321K _international_rectifier
PD — 95699IRF9540SPbF Lead-Free9/10/04Document Number: 91079 www.vishay.com1IRF9540SPbFDocument Number: 91079 www.vishay.com2IRF9540SPbFDocument Number: 91079 www.vishay.com3IRF9540SPbFDocument Number: 91079 www.vishay.com4IRF9540SPbFDocument Number: 91079 www.vishay.com5IRF9540SPbFDocument Number: 91079 www.vishay.com6IRF9540SPbFPeak Diode R
0.2. irf9540s sihf9540s.pdf Size:172K _vishay
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) — 100 Surface Mount RDS(on) ()VGS = — 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
0.3. irf9540s irf9540spbf sihf9540s.pdf Size:197K _vishay
IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) — 100 Surface Mount RDS(on) ()VGS = — 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast
IRF9540N Datasheet (PDF)
0.1. irf9540n.pdf Size:125K _international_rectifier
PD — 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
0.2. irf9540npbf.pdf Size:922K _international_rectifier
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
0.3. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
0.4. irf9540ns.pdf Size:286K _international_rectifier
PD — 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t
0.5. irf9540npbf.pdf Size:922K _infineon
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
0.6. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
0.7. irf9540n.pdf Size:273K _inchange_semiconductor
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr
IRF9540NPBF Datasheet (PDF)
0.1. irf9540npbf.pdf Size:922K _international_rectifier
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
0.2. irf9540npbf.pdf Size:922K _infineon
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
6.1. irf9540n.pdf Size:125K _international_rectifier
PD — 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
6.2. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
6.3. irf9540ns.pdf Size:286K _international_rectifier
PD — 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t
6.4. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
6.5. irf9540n.pdf Size:273K _inchange_semiconductor
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr
IRF9540NL Datasheet (PDF)
0.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
0.2. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
6.1. irf9540n.pdf Size:125K _international_rectifier
PD — 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
6.2. irf9540npbf.pdf Size:922K _international_rectifier
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
6.3. irf9540ns.pdf Size:286K _international_rectifier
PD — 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t
6.4. irf9540npbf.pdf Size:922K _infineon
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
6.5. irf9540n.pdf Size:273K _inchange_semiconductor
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr
IRF9540NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9540NPBF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 140
W
Предельно допустимое напряжение сток-исток |Uds|: 100
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 23
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 97
nC
Время нарастания (tr): 67
ns
Выходная емкость (Cd): 400
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.117
Ohm
Тип корпуса:
IRF9540NPBF
Datasheet (PDF)
0.1. irf9540npbf.pdf Size:922K _international_rectifier
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
0.2. irf9540npbf.pdf Size:922K _infineon
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
6.1. irf9540n.pdf Size:125K _international_rectifier
PD — 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
6.2. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
6.3. irf9540ns.pdf Size:286K _international_rectifier
PD — 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t
6.4. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
6.5. irf9540n.pdf Size:273K _inchange_semiconductor
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr
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IRF9540N Datasheet (PDF)
0.1. irf9540n.pdf Size:125K _international_rectifier
PD — 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
0.2. irf9540npbf.pdf Size:922K _international_rectifier
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
0.3. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
0.4. irf9540ns.pdf Size:286K _international_rectifier
PD — 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t
0.5. irf9540npbf.pdf Size:922K _infineon
PD — 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) — B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)
0.6. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
0.7. irf9540n.pdf Size:273K _inchange_semiconductor
INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr
IRF9540NS Datasheet (PDF)
0.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
0.2. irf9540ns.pdf Size:286K _international_rectifier
PD — 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t
0.3. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon
PD — 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150
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