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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV99WT1/D
SC-70/SOT-323 Dual Series
Switching Diode
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications

• ESD Protection

• Polarity Reversal Protection

• Data Line Protection

• Inductive Load Protection

• Steering Logic

MAXIMUM RATINGS (EACH DIODE)

Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current(1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current

t = 1.0 ms

t = 1.0 ms
t = 1.0 S
Symbol
VR
IF
IFM(surge)
VRRM
IF(AV)
IFRM
IFSM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation

FR–5 Board,(1) TA = 25°C

Derate above 25°C

Thermal Resistance Junction to Ambient
Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25°C

Thermal Resistance Junction to Ambient
Junction and Storage Temperature

1. FR–5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

DEVICE MARKING
BAV99WT1 = A7
BAV99RWT1 = F7
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
Symbol
PD

RqJA

PD

RqJA

TJ, Tstg
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

BAV99WT1
BAV99RWT1
Motorola Preferred Devices
3
ANODE
1
1
2
CATHODE
2
3
CATHODE/ANODE
BAV99WT1
CASE 419–02, STYLE 9
SC–70/SOT–323
CATHODE
1
ANODE
2
3
CATHODE/ANODE
BAV99RWT1
CASE 419–02, STYLE 10
SC–70/SOT–323
Max
200
1.6
625
300
2.4
417
– 65 to +150
Unit
mW

mW/°C

°C/W

mW

mW/°C

°C/W

°C

MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data

1

BAV99WT1 BAV99RWT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic
Symbol
OFF CHARACTERISTICS

Reverse Breakdown Voltage (I(BR) = 100 µA)

Reverse Voltage Leakage Current (VR = 70 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage (IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)

WReverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100

Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
V(BR)
IR
CD
VF
trr
VFR
Min
70
—
—
—
—
—
—
—
—
—
—
Max Unit
—
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Vdc

mAdc

pF
mVdc
ns
V
+10 V

820 Ω

2k

100 µH

0.1 µF

IF

0.1 µF

tr tp
10%
t
IF
trr t

50 Ω OUTPUT

PULSE
GENERATOR
DUT

50 Ω INPUT

90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

100

10
1.0
0.1
0.2
CURVES APPLICABLE TO EACH DIODE
BAV99WT1 BAV99RWT1
10

TA = 150°C

1.0 TA = 125°C

TA = 85°C

TA = 25°C

TA = – 40°C

0.1
0.01
0.001
0.4 0.6 0.8 1.0 1.2

VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage

TA = 85°C

TA = 55°C

TA = 25°C

10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52

2 46
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3