Даташит 2sc2625 pdf ( datasheet )

Биполярный транзистор 2SC2623 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2623

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100
W

Макcимально допустимое напряжение коллектор-база (Ucb): 450
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V

Макcимальный постоянный ток коллектора (Ic): 0.02
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 20

Корпус транзистора:

2SC2623
Datasheet (PDF)

8.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

8.2. 2sc2620.pdf Size:24K _hitachi

2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ

 8.3. 2sc2625.pdf Size:129K _mospec

AAA

8.4. 2sc2625b.pdf Size:238K _nell

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

 8.5. 2sc2620.pdf Size:337K _kexin

SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector — Base Voltage VCBO 30 Collect

8.6. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150

8.7. 2sc2626.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

8.8. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

8.9. 2sc2624.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

Другие транзисторы… 2SC2619B
, 2SC2619C
, 2SC262
, 2SC2620
, 2SC2621
, 2SC2621C
, 2SC2621D
, 2SC2621E
, TIP31C
, 2SC2624
, 2SC2625
, 2SC2626
, 2SC2627
, 2SC2628
, 2SC2629
, 2SC263
, 2SC2630
.

2SC2625B Datasheet (PDF)

0.1. 2sc2625b.pdf Size:238K _nell

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

7.1. 2sc2625.pdf Size:129K _mospec

AAA

7.2. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

2SC2623 Datasheet (PDF)

8.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

8.2. 2sc2620.pdf Size:24K _hitachi

2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ

 8.3. 2sc2625.pdf Size:129K _mospec

AAA

8.4. 2sc2625b.pdf Size:238K _nell

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

 8.5. 2sc2620.pdf Size:337K _kexin

SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector — Base Voltage VCBO 30 Collect

8.6. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150

8.7. 2sc2626.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

8.8. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

8.9. 2sc2624.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

2SC2625 Datasheet (PDF)

0.1. 2sc2625.pdf Size:129K _mospec

AAA

0.2. 2sc2625b.pdf Size:238K _nell

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

 0.3. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

2SC2626 Datasheet (PDF)

0.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

0.2. 2sc2626.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

 8.1. 2sc2620.pdf Size:24K _hitachi

2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ

8.2. 2sc2625.pdf Size:129K _mospec

AAA

 8.3. 2sc2625b.pdf Size:238K _nell

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

8.4. 2sc2620.pdf Size:337K _kexin

SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector — Base Voltage VCBO 30 Collect

 8.5. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150

8.6. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

8.7. 2sc2624.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

Datasheet Download — Unisonic Technologies

Номер произв 2SC2625
Описание HIGH VOLTAGE HIGH SPEED SWITCHING
Производители Unisonic Technologies
логотип 　

1Page

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UNISONIC TECHNOLOGIES CO.,LTD
2SC2625
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH
SPEED SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-3P
www.DataSheet4U.com
*Pb-free plating product number: 2SC2625L
PIN INFORMATION
PIN NO.
PIN NAME
1 Base
2 Collector
3 Emitter
ORDERING INFORMATION
Order Number
Normal
Lead free plating
2SC2625-T3P-T 2SC2625L-T3P-T
Package
TO-3P
Packing
Tube
www.unisonic.com.tw
Copyright 2005 Unisonic Technologies Co.,LTD
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2SC2625
NPN EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (TC=25 )

PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL

VCBO

VCEO

VCEO(SUS)

VEBO

IC

IB

PD

TJ

TSTG

RATINGS
450
400
400
7
10
3
80
+150
-40 ~ +150
UNIT
V
V
V
V
A
A
W

ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified)

PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL

VCBO

VCEO

VCEO (SUS)

VEBO

VCE (Sat)

VBE (Sat)

ICBO

IEBO

hFE

tON

tSTG

tF

TEST CONDITIONS

ICBO=1mA

ICEO=10mA

IC=1A

IEBO=0.1mA

IC=4A, IB=0.8A

VCBO=450V

VEBO=7V

IC=4A, VCE=5V

IC=7.5A, IB1=-IB2=1.5A

RL=20Ω, Pw=20µs, Duty ≤ 2%

MIN
450
400
400
7
10
TYP
MAX
1.2
1.5
1.0
0.1
UNIT
V
V
V
V
V
V
mA
mA
1.0 µs
2.0 µs
1.0 µs
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Case
SYMBOL
JC
RATINGS
1.55
UNIT
/W
SWITCHING TIME TEST CIRCUIT

RL=20

IB1 IC

IB 2

IB 1

IB2

PW=20 s

0.9IC

0.1IC

IC

ton tstg tf

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www.unisonic.com.tw
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2SC2625

TYPICAL CHARACTERISTICS
14
12
10
8
6
4
2

Collector Output Characteristics
900mA
700mA
500mA

TC=25

300mA
200mA

IB =100mA

2 4 6 8 10 12

CollectorEmitter Voltage, VCE (V)

14
3
1
0.5
0.3
0.1
0.05
0.03
Base and Collector Saturation Voltage

VBE(sat)

TC=25

IC=5IB

VCE(sat )

0.01
0.03 0.05 0.1
0.3 0.5 1
3 5 10

CollectorCurrent, IC (A)

Switching Time

3 TC=25

tSTG IC=5IB1 =5IB2

1

0.5 tON

0.3 tF

NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain
300
200
100

50 TC=120

30 25

-20

10 -40

5
3

VCE=5V

1
0.03 0.05 0.1
0.3 0.5 1
3 5 10

Collector Current, IC (A)

Safe Operating Area
30

TC=25

10 Single Pulse

5
3
1
0.5
0.3
50 s
100 s
200 s
500 s

PW=1ms

0.1
0.05
0.03
1
3 5 10
30 50 100 300 500

CollectorEmitter Voltage, VCE (V)

0.1
0.3 0.5
1 35

CollectorCurrent, IC (A)

10
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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2SC2624 Datasheet (PDF)

0.1. 2sc2624.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

8.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

8.2. 2sc2620.pdf Size:24K _hitachi

2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ

 8.3. 2sc2625.pdf Size:129K _mospec

AAA

8.4. 2sc2625b.pdf Size:238K _nell

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

 8.5. 2sc2620.pdf Size:337K _kexin

SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector — Base Voltage VCBO 30 Collect

8.6. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150

8.7. 2sc2626.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

8.8. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

Таблица электрических характеристик при температуре корпуса 25℃

Обозна-чение Параметр Условия изм. Величина Ед. изм.
VCEO(sus) Пробивное напряжение коллектор-эмиттер Ic=10mA,Ib=0 400 V
VCE(sat) Напряжение насыщения коллектор-эмиттер Ic=5.0A,Ib=1.0A 0,5 V
Ic=8.0A,Ib=1.6A 1
Ic=12A,Ib=3.0A 1,5
Ic=8.0A,Ib=1.6A Tc=100℃ 2 V
VBE(sat) Напряжение насыщения база-эмиттер Ic=5.0A,Ib=1.0A 1,2 V
Ic=8.0A,Ib=1.6A 1,6
Ic=8.0A,Ib=1.6A Tc=100℃ 1,5 V
ICBO Ток отсечки коллектор-база (Vbe=-1.5V) Vcb=700V 1 mA
Vcb=700V, Tc=100℃ 5
hFE Коэффициент усиления по постоянному току Vce=5V,IС=5A 10 40
Vce=5V, IС=8A 6 40
Активная нагрузка
ts Продолжительность VCC=125V , Ic=6.0A 1,5 3 ㎲
IB1=1.6A , IB2=-1.6A
tf Время спада Tp=25㎲ 0,16 0,4
Индуктивная нагрузка
ts Продолжительность VCC=15V, Ic=5A 0,6 2 ㎲
IB1=1.6A , Vbe(off)=5V
tf Время спада L=0.35mH, Vclamp=300V 0,04 0,1
Индуктивная нагрузка
ts Продолжительность VCC=15V, Ic=1A IB1=0.4A , Vbe(off)=5V 0,8 2,5 ㎲
tf Время спада L=0.2mH, Vclamp=300V Tc=100℃ 0,05 0,15

Параметры импульсного режима: длительность 300㎲, скважность 2%

2SK2625LS Datasheet (PDF)

0.1. 2sk2625ls.pdf Size:27K _sanyo

Ordering number : ENN70812SK2625LSN-Channel Silicon MOSFET2SK2625LSUltrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Low Qg. 2078C10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI(LS)Absolute Maximum Ratings at Ta=25CPar

8.1. 2sk2628ls.pdf Size:28K _sanyo

Ordering number : ENN70822SK2628LSN-Channel Silicon MOSFET2SK2628LSUltrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Low Qg. 2078C10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI(LS)Absolute Maximum Ratings at Ta=25CPar

8.2. 2sk2624als.pdf Size:53K _sanyo

Ordering number : ENA0362B 2SK2624ALSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2624ALSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS

 8.3. 2sk2624ls.pdf Size:42K _sanyo

Ordering number:ENN5404BN-Channel Silicon MOSFET2SK2624LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.2078B4.510.02.83.20.91.21.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO220FI-LSSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditio

8.4. 2sk2627.pdf Size:111K _sanyo

Ordering number:ENN6228AN-Channel Silicon MOSFET2SK2627Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.21288.27.86.20.631 20.31.0 1.00.62.54 2.545.087.810.01 : Gate6.02 : Source3 : DrainSANYO : ZP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CParamete

 8.5. 2sk2623.pdf Size:138K _sanyo

Ordering number:ENN6148AN-Channel Silicon MOSFET2SK2623Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.2083B6.52.35.00.540.850.71.20.6 0.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TP2092B6.5 2.35.0 0.540.50.851 2 30.61 : Gate1.20 to 0

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