IRL2505PBF Datasheet (PDF)
0.1. irl2505pbf.pdf Size:223K _international_rectifier
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
0.2. irl2505pbf.pdf Size:223K _infineon
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
7.1. irl2505spbf irl2505lpbf.pdf Size:292K _international_rectifier
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
7.2. irl2505s.pdf Size:178K _international_rectifier
PD — 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
7.3. irl2505.pdf Size:108K _international_rectifier
PD — 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
7.4. irl2505lpbf irl2505spbf.pdf Size:292K _infineon
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
7.5. irl2505s.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
7.6. irl2505.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
Планарные MOSFETS транзисторы
D-PAK (доступны в корпусах I-Pak)
|
30 В |
30V, 46A, 19 mOhm, 33.3 nC Qg, Logic Level, D-Pak |
|
|
40 В |
40V, 87A, 9.2 mOhm, 48 nC Qg, D-Pak |
|
|
55 В |
55V, 71A, 13 mOhm, 62 nC Qg, D-Pak |
|
|
75 В |
75V, 42A, 26 mOhm, 74 nC Qg, D-Pak |
|
|
100 В |
100V, 32A, 44 mOhm, 48 nC Qg, D-Pak |
D2PAK (доступны в корпусах TO-262)
|
30 В |
30V, 200A, 3 mOhm, 75 nC Qg, Logic Level, D2-Pak |
|
|
40 В |
40V, 160A, 4 mOhm, 93.3 nC Qg, Logic Level, D2-Pak |
|
|
40V, 162A, 4 mOhm, 160 nC Qg, D2-Pak |
||
|
55 В |
55V, 104A, 8 mOhm, 86.7 nC Qg, Logic Level, D2-Pak |
|
|
55V, 135A, 4.7 mOhm, 150 nC Qg, D2-Pak |
||
|
75 В |
75V, 105A, 7 mOhm, 150 nC Qg, D2-Pak |
|
|
100 В |
100V, 80A, 15 mOhm, 81 nC Qg, D2-Pak |
|
|
100V, 103A, 11.6 mOhm, 100 nC Qg, D2-Pak |
TO-220 и TO-247
|
30 В |
30V, 200A, 3 mOhm, 75 nC Qg, Logic Level, TO-220AB |
|
|
40 В |
40V, 160A, 4 mOhm, 93.3 nC Qg, Logic Level, TO-220AB |
|
|
40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB |
||
|
55 В |
55V, 133A, 5.3 mOhm, 170 nC Qg, TO-220AB |
|
|
55V, 160A, 5.3 mOhm, 120 nC Qg, TO-247AC |
||
|
75 В |
75V, 177A, 4.5 mOhm, 410 nC Qg, TO-247AC |
|
|
100 В |
100V, 80A, 15 mOhm, 81 nC Qg, TO-220AB |
|
|
100V, 51A, 250 mOhm, 66.7 nC Qg, TO-247AC |
IRL2505L Datasheet (PDF)
0.1. irl2505spbf irl2505lpbf.pdf Size:292K _international_rectifier
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.2. irl2505lpbf irl2505spbf.pdf Size:292K _infineon
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
7.1. irl2505pbf.pdf Size:223K _international_rectifier
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
7.2. irl2505s.pdf Size:178K _international_rectifier
PD — 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
7.3. irl2505.pdf Size:108K _international_rectifier
PD — 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
7.4. irl2505pbf.pdf Size:223K _infineon
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
7.5. irl2505s.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
7.6. irl2505.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
P-канальные MOSFET транзисторы одноканальные
SOT-23
|
-20 В |
P-Channel, -20V, 2.6A, 135 mOhm, 2.5V Drive capable, SOT-23 |
|
|
P-Channel, -20V, 4.3A, 54 mOhm, 2.5V Drive capable, SOT-23 |
||
|
-30 В |
P-Channel, -30V, 1A, 150 mOhm, SOT-23 |
|
|
P-Channel, -30V, 3.6A, 64 mOhm, SOT-23 |
PQFN 2×2 мм, 3×3 мм
|
-20 В |
P-Channel, -20V, 8.5A, 31 mOhm, 2.5V Capable PQFN2x2 |
|
|
-30 В |
||
|
P-Channel, -30V, 10A, 15 mOhm, PQFN33 |
||
|
P-Channel, -30V, 8.5A, 37 mOhm, PQFN2x2 |
SO-8 и TSOP-6
|
-30 В |
IRFTS9342TRPBF |
P-Channel, -30V, 6A, 39 mOhm, TSOP-6 |
|
P-Channel, -30V, 5.4A, 59 mOhm, SO-8 |
||
|
P-Channel, -30V, 7.5A, 19 mOhm, SO-8 |
||
|
P-Channel, -30V, 9A, 17.5 mOhm, SO-8 |
||
|
P-Channel, -30V, 10A, 12 mOhm, SO-8 |
||
|
P-Channel, -30V, 15A, 7.2 mOhm, SO-8 |
||
|
P-Channel, -30V, 16A, 6.6 mOhm, SO-8 |
||
|
P-Channel, -30V, 21A, 4.6 mOhm, SO-8 |
PQFN 5×6мм
|
-30 В |
P-Channel, -30V, 23A, 4.6 mOhm, PQFN5X6 |
IRL2505SPBF Datasheet (PDF)
0.1. irl2505spbf irl2505lpbf.pdf Size:292K _international_rectifier
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.2. irl2505lpbf irl2505spbf.pdf Size:292K _infineon
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
6.1. irl2505s.pdf Size:178K _international_rectifier
PD — 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
6.2. irl2505s.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
IRL2505 Datasheet (PDF)
0.1. irl2505pbf.pdf Size:223K _international_rectifier
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
0.2. irl2505spbf irl2505lpbf.pdf Size:292K _international_rectifier
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.3. irl2505s.pdf Size:178K _international_rectifier
PD — 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
0.4. irl2505.pdf Size:108K _international_rectifier
PD — 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
0.5. irl2505pbf.pdf Size:223K _infineon
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
0.6. irl2505lpbf irl2505spbf.pdf Size:292K _infineon
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.7. irl2505s.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
0.8. irl2505.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
IRL2505 Datasheet (PDF)
0.1. irl2505pbf.pdf Size:223K _international_rectifier
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
0.2. irl2505spbf irl2505lpbf.pdf Size:292K _international_rectifier
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.3. irl2505s.pdf Size:178K _international_rectifier
PD — 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
0.4. irl2505.pdf Size:108K _international_rectifier
PD — 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
0.5. irl2505pbf.pdf Size:223K _infineon
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
0.6. irl2505lpbf irl2505spbf.pdf Size:292K _infineon
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.7. irl2505s.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
0.8. irl2505.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
IRL2505S Datasheet (PDF)
0.1. irl2505spbf irl2505lpbf.pdf Size:292K _international_rectifier
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.2. irl2505s.pdf Size:178K _international_rectifier
PD — 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
0.3. irl2505lpbf irl2505spbf.pdf Size:292K _infineon
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
0.4. irl2505s.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Аудио MOSFET транзисторы класса D
Все корпуса
|
Наим-е |
Корпус |
Напряжение пробоя |
Rds(on) тип. (10 В) |
Ток стока (25°C) |
Заряд затвора |
Класс |
| IRFI4024H-117P |
5-pin TO-220 |
55V |
48 mOhm |
11 A |
8.9 nC |
Consumer |
| IRFI4212H-117P |
5-pin TO-220 |
100V |
58 mOhm |
11 A |
12 nC |
Consumer |
| IRFI4019H-117P |
5-pin TO-220 |
150V |
80 mOhm |
8.7 |
13 nC |
Consumer |
| IRFI4020H-117P |
5-pin TO-220 |
200V |
80 mOhm |
9.1 A |
19 nC |
Consumer |
| IRF6665TRPBF |
DirectFET SH |
100V |
53 mOhm |
19 A |
8.7 nC |
Consumer |
| IRF6645TRPBF |
DirectFET SJ |
100V |
28 mOhm |
25 A |
14 nC |
Consumer |
| IRF6644TRPBF |
DirectFET MN |
100V |
10 mOhm |
60 A |
35 nC |
Consumer |
| IRF6775MTRPBF |
DirectFET MZ |
150V |
56 mOhm |
28 A |
25 nC |
Consumer |
| IRF6785MTRPBF |
DirectFET MZ |
200V |
85 mOhm |
15 A |
26 nC |
Consumer |
| IRF6648TRPBF |
DirectFET MN |
60V |
5.5 mOhm |
86 A |
36 nC |
Consumer |
| IRF6668TRPBF |
DirectFET MZ |
80V |
12 mOhm |
55 A |
22 nC |
Consumer |
| IRF6646TRPBF |
DirectFET MN |
80V |
7.6 mOhm |
68 A |
36 nC |
Consumer |
| IRFB4212PBF |
TO-220 |
100V |
72.5 mOhm |
18 A |
15 nC |
Industrial |
| IRFB4019PBF |
TO-220 |
150V |
80 mOhm |
17 A |
13 nC |
Consumer |
| IRFB5615PBF |
TO-220 |
150V |
32 mOhm |
35 A |
26 nC |
Industrial |
| IRFB4228PBF |
TO-220 |
150V |
12 mOhm |
83 A |
72 nC |
Industrial |
| IRFB4020PBF |
TO-220 |
200V |
80 mOhm |
18 A |
18 nC |
Consumer |
| IRFB4227PBF |
TO-220 |
200V |
19.7 mOhm |
65 A |
70 nC |
Industrial |
| IRFB5620PBF |
TO-220 |
200V |
60 mOhm |
25 A |
25 nC |
Industrial |
| IRFP4668PBF |
TO-247 |
200V |
8 mOhm |
130 A |
161 nC |
Industrial |
| IRFB4229PBF |
TO-220 |
250V |
38 mOhm |
46 A |
72 nC |
Industrial |
| IRFP4768PBF |
TO-247 |
250V |
14.5 mOhm |
93 A |
180 nC |
Industrial |
IRL2505PBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL2505PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200
W
Предельно допустимое напряжение сток-исток |Uds|: 55
V
Предельно допустимое напряжение затвор-исток |Ugs|: 16
V
Пороговое напряжение включения |Ugs(th)|: 2
V
Максимально допустимый постоянный ток стока |Id|: 104
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 130
nC
Время нарастания (tr): 160
ns
Выходная емкость (Cd): 1100
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008
Ohm
Тип корпуса:
IRL2505PBF
Datasheet (PDF)
0.1. irl2505pbf.pdf Size:223K _international_rectifier
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
0.2. irl2505pbf.pdf Size:223K _infineon
PD -95622IRL2505PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing tech
7.1. irl2505spbf irl2505lpbf.pdf Size:292K _international_rectifier
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
7.2. irl2505s.pdf Size:178K _international_rectifier
PD — 91326DIRL2505S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
7.3. irl2505.pdf Size:108K _international_rectifier
PD — 91325CIRL2505HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extre
7.4. irl2505lpbf irl2505spbf.pdf Size:292K _infineon
PD — 95577IRL2505LPbFIRL2505SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL2505S) DVDSS = 55Vl Low-profile through-hole (IRL2505L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierut
7.5. irl2505s.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL2505SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
7.6. irl2505.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2505IIRL2505FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
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