Datasheet irf630 pdf ( даташит )

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IRF630NPBF Datasheet (PDF)

0.1. irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf Size:335K _international_rectifier

PD — 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

0.2. irf630npbf irf630nspbf irf630nlpbf.pdf Size:335K _infineon

7.1. irf630n.pdf Size:155K _international_rectifier

PD — 94005AIRF630NIRF630NSIRF630NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature DVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.30 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced proces

7.2. irf630n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

7.3. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de

7.4. irf630nl.pdf Size:244K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

7.5. irf630ns.pdf Size:229K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

IRF630NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF630NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 82
W

Предельно допустимое напряжение сток-исток |Uds|: 200
V

Предельно допустимое напряжение затвор-исток |Ugs|: 20
V

Пороговое напряжение включения |Ugs(th)|: 4
V

Максимально допустимый постоянный ток стока |Id|: 9.3
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 35
nC

Время нарастания (tr): 14
ns

Выходная емкость (Cd): 89
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.3
Ohm

Тип корпуса:

IRF630NPBF
Datasheet (PDF)

0.1. irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf Size:335K _international_rectifier

0.2. irf630npbf irf630nspbf irf630nlpbf.pdf Size:335K _infineon

7.1. irf630n.pdf Size:155K _international_rectifier

7.2. irf630n.pdf Size:245K _inchange_semiconductor

7.3. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

7.4. irf630nl.pdf Size:244K _inchange_semiconductor

7.5. irf630ns.pdf Size:229K _inchange_semiconductor

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

IRFS630A Datasheet (PDF)

1.1. irfs630a.pdf Size:508K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Ox >4.1. irfs634b.pdf Size:858K _upd

November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to �

4.2. irf634b irfs634b.pdf Size:859K _fairchild_semi

November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 8.1A, 250V, RDS(on) = 0.45? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 29 nC) planar, DMOS technology. � Low Crss ( typical 20 pF) This advanced technology has been especially tailored to � Fast switchi

4.3. irfs634a.pdf Size:505K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 ? Rugged Gate Ox >

IRFS630A Datasheet (PDF)

0.1. irfs630a.pdf Size:508K _samsung

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

7.1. irfs630 irfs631.pdf Size:284K _1

7.2. irf630b irfs630b.pdf Size:859K _1

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

IRFS630 Datasheet (PDF)

0.1. irfs630 irfs631.pdf Size:284K _1

0.2. irf630b irfs630b.pdf Size:859K _1

0.3. irfs630a.pdf Size:508K _samsung

IRF630N Datasheet (PDF)

0.1. irf630n.pdf Size:155K _international_rectifier

0.2. irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf Size:335K _international_rectifier

0.3. irf630npbf irf630nspbf irf630nlpbf.pdf Size:335K _infineon

0.4. irf630n.pdf Size:245K _inchange_semiconductor

0.5. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

0.6. irf630nl.pdf Size:244K _inchange_semiconductor

0.7. irf630ns.pdf Size:229K _inchange_semiconductor

IRF630N Datasheet (PDF)

0.1. irf630n.pdf Size:155K _international_rectifier

0.2. irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf Size:335K _international_rectifier

0.3. irf630npbf irf630nspbf irf630nlpbf.pdf Size:335K _infineon

0.4. irf630n.pdf Size:245K _inchange_semiconductor

0.5. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

0.6. irf630nl.pdf Size:244K _inchange_semiconductor

0.7. irf630ns.pdf Size:229K _inchange_semiconductor

IRF630S Datasheet (PDF)

0.1. irf630s.pdf Size:85K _st

IRF630S N — CHANNEL 200V — 0.35 — 9A- D2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630S 200 V

0.2. irf630spbf.pdf Size:981K _international_rectifier

PD — 95118IRF630SPbF Lead-Free3/17/04Document Number: 91032 www.vishay.com1IRF630SPbFDocument Number: 91032 www.vishay.com2IRF630SPbFDocument Number: 91032 www.vishay.com3IRF630SPbFDocument Number: 91032 www.vishay.com4IRF630SPbFDocument Number: 91032 www.vishay.com5IRF630SPbFDocument Number: 91032 www.vishay.com6IRF630SPbFD2Pak Package Outli

0.3. irf630s sihf630s.pdf Size:170K _vishay

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

0.4. irf630spbf sihf630s.pdf Size:196K _vishay

0.5. irf630s.pdf Size:1779K _kexin

SMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont

Другие разделы справочника:

Есть надежда, что справочник транзисторов окажется полезен опытным и начинающим радиолюбителям, конструкторам и учащимся. Всем тем, кто так или иначе сталкивается с необходимостью узнать больше о параметрах транзисторов. Более подробную информацию обо всех возможностях этого интернет-справочника можно прочитать на странице «О сайте». Если Вы заметили ошибку, огромная просьба написать письмо. Спасибо за терпение и сотрудничество.

В данном тексте опишем основные технические характеристики транзистора IRF630. Он используется чаще всего в блоках питания, стабилизаторах, регуляторах, схемах управления электродвигателями и других электронных устройствах. Их можно найти в схемах развертки мониторов, импульсных блоках питания. Основная информация:

Полярность -N;
Тип — MOSFET;
Корпус — TO220.

IRF630B Datasheet (PDF)

0.1. irf630b irfs630b.pdf Size:859K _1

0.2. irf630b.pdf Size:859K _fairchild_semi

0.3. irf630b.pdf Size:67K _no

0.4. irf630b.pdf Size:142K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current ID= 9A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve

IRF630NS Datasheet (PDF)

0.1. irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf Size:335K _international_rectifier

0.2. irf630npbf irf630nspbf irf630nlpbf.pdf Size:335K _infineon

0.3. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

0.4. irf630ns.pdf Size:229K _inchange_semiconductor

Datasheet Download — ST Microelectronics

Номер произв

IRF630MFP

Описание

N-CHANNEL 200V — 0.35W — 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Производители

ST Microelectronics

логотип

1Page

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IRF630M
IRF630MFP

N-CHANNEL 200V — 0.35Ω — 9A TO-220/TO-220FP

MESH OVERLAY MOSFET
TYPE

VDSS

RDS(on)

IRF630M

200 V < 0.40 Ω

9A
IRF630FPM

200 V < 0.40 Ω

s TYPICAL RDS(on) = 0.35 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
This power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAY process. This technology matches and
improves the performances compared with standard
parts from various sources.
INTERNAL SCHEMATIC DIAGRAM
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
DataSheet4U.com
.APPLICATIONS

s MONITOR DISPLAYS

s GENERAL PURPOSE SWITCH

DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS Gate- source Voltage

ID Drain Current (continuos) at TC = 25°C

ID Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope

VISO

Insulation Winthstand Voltage (DC)

Tstg Storage Temperature

Tj Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area
October 2001
DataSheet4U.com
Value
IRF630M
IRF630MFP
200
200
± 20
9 9 (**)
5.7 5.7 (**)
36 36
75 30
0.6 0.24
55
— 2500
–65 to 150
150

(1)ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(**) Limited only by Maximum Temperature Allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9

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IRF630M / FP
THERMAL DATA
Rthj-case
Rthj-amb

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.67
62.5
300
TO-220FP
4.17

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.

V(BR)DSS Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

200

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1
50

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100
°C/W
°C/W
°C
Unit
V
µA
µA
nA
ON (1)
Symbol

VGS(th)

RDS(on)

Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 4.5 A

Min.
2
Typ.
3
0.35
Max.
4
0.40
Unit
V
Ω
et4U.com
DYNAMIC
Symbol

gfs (1)

Parameter
Forward Transconductance

Ciss

Coss

Crss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

DataSTheseteCt4oUn.dciotiomns

VDS > ID(on) x RDS(on)max,

ID = 4.5 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.
3
Typ.
4
540
90
35
Max.
700
120
50
Unit
S
pF
pF
pF
DataShee
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ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
Symbol
Parameter

td(on)

Turn-on Delay Time

tr Rise Time

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

Test Conditions

VDD = 100 V, ID = 4.5 A

RG = 4.7Ω VGS = 10 V

(see test circuit, Figure 3)

VDD = 160V, ID = 9 A,

VGS = 10V

SWITCHING OFF
Symbol
Parameter

tr(Voff)

Off-voltage Rise Time

tf Fall Time

tc Cross-over Time

Test Conditions

VDD = 160V, ID = 9 A,

RG = 4.7Ω, VGS = 10V

(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions

ISD Source-drain Current

ISDM (2) Source-drain Current (pulsed)

VSD (1) Forward On Voltage

ISD = 9 A, VGS = 0

trr

Qrr

IRRM

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 9 A, di/dt = 100A/µs

VDDDat=a5ShVe,eTt4j =U1.c5om°C

(see test circuit, Figure 5)

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.
IRF630M / FP
Min.
Typ.
10
15
31
7.5
9
Max.
14
20
45
Unit
ns
ns
nC
nC
nC
Min.
Typ.
12
12
25
Max.
17
17
35
Unit
ns
ns
ns
Min.
Typ.
170
0.95
11
Max.
9
36
1.5
Unit
A
A
V
ns

µC

A
DataShee
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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Даташит irf630 pdf ( datasheet )

IRF630NPBF Datasheet (PDF)

IRF630NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

IRF630NPBF Datasheet (PDF)

IRFS630A Datasheet (PDF)

IRFS630A Datasheet (PDF)

IRFS630 Datasheet (PDF)

IRF630N Datasheet (PDF)

IRF630N Datasheet (PDF)

IRF630S Datasheet (PDF)

Другие разделы справочника:

IRF630B Datasheet (PDF)

IRF630NS Datasheet (PDF)

Datasheet Download — ST Microelectronics

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IRF630NPBF
Datasheet (PDF)